1SV216TPH3 datasheet, PDF - EEWORLD Datasheet

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1SV216TPH3: DescriptionDIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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1SV216TPH3 Overview

DIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

1SV216TPH3 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Minimum breakdown voltage	30 V
Configuration	SINGLE
Minimum diode capacitance ratio	2.5
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	35 V
Maximum reverse current	1e-8 µA
Reverse test voltage	28 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

1SV216TPH3 Related Products

	1SV216TPH3	1SV216TPHR4	CSR0204FTDU2803	1SV216TPHR2	1SV216TPH2	1SV216TPH4
Description	DIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode	DIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode	Fixed Resistor, Thin Film, 0.5W, 280000ohm, 300V, 1% +/-Tol, -50,50ppm/Cel,	DIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode	DIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode	DIODE VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
Reach Compliance Code	unknown	unknown	compliant	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	125 °C	125 °C	155 °C	125 °C	125 °C	125 °C
Package shape	RECTANGULAR	RECTANGULAR	CYLINDRICAL PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	MELF	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maker	Toshiba Semiconductor	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	R-PDSO-G2	R-PDSO-G2	-	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2
Is Samacsys	N	N	-	N	N	N
Minimum breakdown voltage	30 V	30 V	-	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum diode capacitance ratio	2.5	2.5	-	2.5	2.5	2.5
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	-	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G2	R-PDSO-G2	-	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2
Number of components	1	1	-	1	1	1
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	1e-8 µA	0.01 µA	-	0.01 µA	0.01 µA	0.01 µA
Reverse test voltage	28 V	28 V	-	28 V	28 V	28 V
surface mount	YES	YES	-	YES	YES	YES
Terminal form	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	DUAL	DUAL	DUAL
Base Number Matches	1	1	-	1	1	1

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