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1N5625TR

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size24KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1N5625TR Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon,

1N5625TR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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