1SMB8.0CATR13 datasheet, PDF - EEWORLD Datasheet

1SMB8.0CATR13: DescriptionTrans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon,; CategoryDiscrete semiconductor diode; File Size65KB，2 Pages; ManufacturerCentral Semiconductor

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1SMB8.0CATR13 Overview

Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	R-PDSO-C2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Maximum breakdown voltage	10.23 V
Minimum breakdown voltage	8.89 V
Breakdown voltage nominal value	9.56 V
Maximum clamping voltage	13.6 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	8 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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