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1N6053A

Description
1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13, METAL PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size58KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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1N6053A Overview

1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13, METAL PACKAGE-2

1N6053A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionO-MALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage41 V
Minimum breakdown voltage37.1 V
Breakdown voltage nominal value39 V
Maximum clamping voltage53.9 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-13
JESD-30 codeO-MALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Maximum repetitive peak reverse voltage33.3 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN/LEAD (SN/PB)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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