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1N4770

Description
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CategoryDiscrete semiconductor    Zener diode   
File Size2MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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1N4770 Parametric

Parameter NameAttribute value
Case StyleDO-41
Pd(W)1
VZ(Min)-
VZ(Nom)180
VZ(Max)-
IZT(mA)1.4
IR(uA)5.0
VR(V)136.8
classDiodes
1N4728-1N4764
Zener Diodes
POWER DISSIPATION: 1.0 W
Features
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
power rating.
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
DO-41
Mechanical Data
Case:DO-41
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.35 grams.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation @ T
amb
50
P
Diss
I
Z
T
J
T
s
R
ThJA
1.0
1)
P
V
/V
Z
200
-55---+200
100
W
Z-current
mA
Junction temperature
Storage temperature range
Junction ambient I=9.5mm(3/8 ), T
L
=constant
K/W
SYMBOL
Forw ard voltage at I
F
=200mA
MIN
TYP
MAX
1.2
UNIT
V
V
F
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

1N4770 Related Products

1N4770 1N4771 1N4765 RNC32T21.84K0.05%R 1N4767 1N4768 1N4769
Description No description yet No description yet No description yet Fixed Resistor, Thin Film, 0.25W, 1840ohm, 150V, 0.05% +/-Tol, -50,50ppm/Cel, 1206, No description yet No description yet No description yet
Case Style DO-41 DO-41 DO-41 - DO-41 DO-41 DO-41
Pd(W) 1 1 1 - 1 1 1
VZ(Nom) 180 200 110 - 130 150 160
IZT(mA) 1.4 1.2 2.3 - 1.9 1.7 1.6
IR(uA) 5.0 5.0 5.0 - 5.0 5.0 5.0
VR(V) 136.8 152 83.6 - 98.8 114 121.6
class Diodes Diodes Diodes - Diodes Diodes Diodes

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