ST333S08PFJ0 datasheet, PDF - EEWORLD Datasheet

ST333S08PFJ0: DescriptionSilicon Controlled Rectifier, 518A I(T)RMS, 330000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AE; CategoryAnalog mixed-signal IC Trigger device; File Size131KB，9 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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ST333S08PFJ0 Overview

Silicon Controlled Rectifier, 518A I(T)RMS, 330000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	POST/STUD MOUNT, O-MUPM-H2
Reach Compliance Code	compliant
Is Samacsys	N
Other features	HIGH SPEED
Nominal circuit commutation break time	25 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
JEDEC-95 code	TO-209AE
JESD-30 code	O-MUPM-H2
JESD-609 code	e0
Maximum leakage current	50 mA
On-state non-repetitive peak current	11520 A
Number of components	1
Number of terminals	2
Maximum on-state current	330000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	518 A
Maximum repetitive peak off-state leakage current	50000 µA
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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