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MXLRT100KP60CE3

Description
Trans Voltage Suppressor Diode, 100000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size435KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MXLRT100KP60CE3 Overview

Trans Voltage Suppressor Diode, 100000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

MXLRT100KP60CE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage73.7 V
Minimum breakdown voltage66.7 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AR
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation100000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation7 W
GuidelineMIL-19500
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MRT100KP40A – MRT100KP400CA(e3)
Screening in
reference to
MIL-PRF-19500
available
Available
Unidirectional and Bidirectional Transient
Voltage Suppressor (TVS) Device
DESCRIPTION
These MRT100KP40A – MRT100KP400CA high reliability devices protect against dangerous
high-voltage, short term transients such as those caused the the secondary effects of lightning
per IEC61000-4-5 (see protection classes below) and RTCA/DO-160. They also protect
against voltage spikes caused by inductive load switching, induced RFI, and ESD or EFT per
IEC61000-4-2 and IEC61000-4-4. Clamping time is nearly instantaneous at < 5ns.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional configurations
Suppresses transients up to 100 kW @ 6.4/69
µs
Fast response with less than 5 ns turn-on time
Preferred 100 kW TVS for aircraft power bus protection
3σ lot norm screening performed on standby current I
D
100% surge tested devices
Multiple screening levels in reference to MIL-PRF-19500 are available. Refer to
Hirel Non-
Hermetic Product Portfolio
for more details on the screening options.
(See
part nomenclature
for all options.)
High reliability controlled devices have wafer fabrication and assembly lot traceability
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant versions are available
Case 5A
(DO-204AR)
Package
APPLICATIONS / BENEFITS
Economical TVS series for thru-hole mounting
Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 4 (6.4/69 μs) on all devices
Pin injection protection per RTCA/DO-160 up to Level 5 for Waveform 4 (6.4/69 μs) on device types
MRT100KP33A or CA up to MRT100KP260A or CA
Pin injection protection per RTCA/DO-160 up to Level 3 for Waveform 5A (40/120 μs) on all devices
Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 5A (40/120 μs) on device
types MRT100KP33A or CA up to MRT100KP64A or CA
Consult Factory for other voltages with similar Peak Pulse Power (P
PP
) capabilities
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01012, Rev. B (9/20/13)
©2013 Microsemi Corporation
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