EEWORLDEEWORLDEEWORLD

Part Number

Search

FPD6836

Description
RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
CategoryDiscrete semiconductor    The transistor   
File Size92KB,3 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric View All

FPD6836 Overview

RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

FPD6836 Parametric

Parameter NameAttribute value
MakerQorvo
package instructionDIE
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
FET technologyHIGH ELECTRON MOBILITY
highest frequency bandX BAND
JESD-30 codeR-XUUC-N
Number of components1
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1.2 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
FPD6836
0.25W P
OWER P
HEMT
F
EATURES
:
25.5 dBm Output Power (P1dB)
10 dB Power Gain at 12 GHz
16.5 dB Max Stable Gain at 12 GHz
12 dB Maximum Stable Gain at 24 GHz
50% Power-Added Efficiency
8V Operation
Datasheet v3.0
L
AYOUT
:
G
ENERAL
D
ESCRIPTION
:
The
FPD6836
is
an
AlGaAs/InGaAs
pseudomorphic
High
Electron
Mobility
Transistor (PHEMT), featuring a 0.25
µm
by
360
µm
Schottky barrier gate, defined by high
-resolution stepper-based photolithography.
The recessed gate structure minimizes
parasitics to optimize performance.
The
epitaxial structure and processing have been
optimized for reliable high-power applications.
T
YPICAL
A
PPLICATIONS
:
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
E
LECTRICAL
S
PECIFICATIONS
1
:
P
ARAMETER
Power at 1dB Gain Compression
Power Gain at P1dB
Power-Added Efficiency
Maximum Stable Gain (S21/S12)
f
= 12 GHz
f
= 24 GHz
Saturated Drain-Source Current
Maximum Drain-Source Current
IDSS
IMAX
S
YMBOL
P1dB
G1dB
PAE
MSG
C
ONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
POUT = P1dB
M
IN
24.5
9.0
T
YP
25.5
10.0
50
M
AX
U
NITS
dBm
dB
%
VDS = 8 V; IDS = 50% IDSS
15.5
11.0
16.5
12.0
110
215
135
dB
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.36 mA
IGS = 0.36 mA
IGD = 0.36 mA
VDS > 3V
90
mA
mA
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
1
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
140
1
0.7
12.0
14.5
1.0
14.0
16.0
125
10
1.3
mS
µA
V
V
V
°C/W
Note: T
Ambient
= 22°C; RF specifications measured at
f
= 12 GHz using CW signal
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
Software platform installation for SILICON LABS PG22-DK2503A development board
Enter SILICON LABS official website: https://cn.silabs.com/development-tools/mcu/32-bit/efm32pg22-development-kit Then select "Get Started"on the web pageand download and installSimplicity Studio vers...
cjjh2014 Development Kits Review Area
CCS CMD file invalidation causes memory allocation failure
The C6678.cmd file is grayed out for some reason. I didn't notice it at first, but when I compiled the project, I found that all memory allocated in DDR failed. Is it possible that my cmd file is not ...
Aguilera DSP and ARM Processors
Design and implementation of FM function in handheld devices
This article introduces how to implement FM radio function in embedded systems, focusing on the working principle, hardware and software design and key points of FM chip TEA5760, and gives the test re...
Jacktang Wireless Connectivity
TI mmWave Radar China Tour
[i=s]This post was last edited by qwqwqw2088 on 2019-4-18 19:41[/i] [table=537] [tr][td][align=left][size=4]Texas Instruments (TI) is bringing unprecedented precision and intelligence to a wide range ...
qwqwqw2088 Analogue and Mixed Signal
What is the io write speed of R16 itself?
A: What is the io write speed of R16 itself? [/color][/font][/color][/size] [size=3][color=#333333][font=微软雅黑, 微软雅黑,][color=#006400]B: How did you test the disk's write speed? [/color][/font][/color][...
明远智睿Lan Integrated technical exchanges
MSP430G2553 electronic clock experiment
Use msp430g2553 to control the 1602 LCD to display time, and you can set the time by pressing the button. I made two modes: forward timing and countdown. /*********************************************...
fish001 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号