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2SC1345E

Description
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size60KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SC1345E Overview

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN

2SC1345E Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeTO-92
package instructionTO-92(1), 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)230 MHz
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

2SC1345E Related Products

2SC1345E 2SC1345D 2SC1344E 2SC1344F 2SC1344D 2SC1345F
Description 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction TO-92(1), 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 TO-92(1), 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknow compliant unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 30 V 30 V 30 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 400 250 400 600 250 600
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 230 MHz 230 MHz 230 MHz 230 MHz 230 MHz 230 MHz
Base Number Matches 1 1 1 1 1 1
Maker Renesas Electronics Corporation - Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Is Samacsys N - N N N N

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