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CRSM062N10N

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size472KB,9 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CRSM062N10N Overview

Power device_MOSFET_12V-300V NMOS

CRSM062N10N Parametric

Parameter NameAttribute value
PARTNUMBERCRSM062N10N
PACKAGEDFN5*6
POLARITYN
VDS100
IDA79
VTYPE105.7
VMAX106.8
VTYPE45-
VMAX45-
VGSMIN2.2
VGSMAX3.8
QGNC65
CISSPF4135
CRTIME202006
RN74

CRSM062N10N Preview

Download Datasheet
CRSM062N10N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Synchronous Rectification for AC/DC Quick Charger
• Battery management
• UPS (Uninterrupible Power Supplies)
V
DS
R
DS(on)@10V typ
I
D
SkyMOS1 N-MOSFET 100V, 5.7mΩ, 79A
Product Summary
100V
5.7mΩ
79A
100% Avalanche Tested
CRSM062N10N
Package Marking and Ordering Information
Part #
CRSM062N10N
Marking
Package
DFN5X6
Packing
Tape&Reel
Reel Size
N/A
Tape Width
N/A
Qty
5000pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.3mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
79
80
50
316
135
±20
79
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
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