SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT3906LT1
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
GENERAL PURPOSE TRANSISTOR
*
Complement to MMBT3904LT1
*
Collector Dissipation: Pc=225mW
*
Collector-Emitter Voltage :Vceo= -40V
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
-40
-40
-5
-200
225
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Emitter-Base Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Iebo
Icex
Hfe1
Hfe2
Hfe3
Hfe4
Hfe5
Vce(sat)
Vce(sat)
Vbe(sat)
Vbe(sat)
Cob
f
T
250
60
80
100
60
30
-0.4
-0.25
-0.95
-0.85
4.5
V
V
V
V
PF
MHz
300
Min
-40
-40
-5
-50
-50
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic= -10uA
Ic= -1mA
Ie= -10uA
Veb= -3V
Ie=0
Ib=0
Ic=0
Ie=0
Vce= -30V Veb= -3V
Vce= -1V Ic= -0.1mA
Vce= -1V Ic= -1mA
Vce= -1V Ic= -10mA
Vce= -1V Ic= -50mA
Vce= -1V Ic= -100mA
Ic= -50mA Ib= -5mA
Ic= -10mA Ib= -1mA
Ic= -50mA Ib= -5mA
Ic= -10mA Ib= -1mA
Vce= -5V Ie=0 f=1MHz
Vce= -20V Ic= -10mA
f=100MHz
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
MMBT3906LT1=2A
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT3906LT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
MMBT3906LT1
3V
+ 9.1 V
<1ns
3V
275
+ 0.5 V
0
<1 ns
275
10 k
0
10 k
C
S
< 4.0 pF*
1N916
t
C
S
< 4.0 pF*
– 10.6 V
300ns
DUTY CYCLE = 2%
10 < t
1
< 500
µs
DUTY CYCLE = 2%
1
10.9 V
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10.0
5000
3000
7.0
5.0
2000
V
CC
= 40 V
I
C
/ I
B
= 10
C
obo
C
ibo
Q, CHARGE (pC)
CAPACITANCE (pF)
1000
700
500
3.0
300
200
100
70
2.0
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
500
300
200
100
70
50
500
Figure 4. Charge Data
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
t
r
, FALL TIME (ns)
100
70
50
30
20
10
7
5
300
200
t
r
@V
CC
=3.0V
15 V
40 V
2.0 V
t
d
@V
OB
=0V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
TIME (ns)
30
20
10
7
5
I
C
/I
B
= 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Fall Time
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT3906LT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
MMBT3906LT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= – 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
SOURCE RESISTANCE= 200Ω
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
14
f = 1.0 kHz
12
I
C
= 1.0 mA
I
C
= 0.5 mA
NF, NOISE FIGURE (dB)
8
SOURCE RESISTANCE= 200
Ω
I
C
= 0.5 mA
SOURCE RESISTANCE =1.0kΩ
I
C
= 50
µA
10
8
6
4
2
0
6
4
I
C
= 50
µA
I
C
= 100
µA
2
SOURCE RESISTANCE= 500Ω
I
C
= 100
µA
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R
g
, SOURCE RESISTANCE (kΩ)
Figure 7. Noise Figure
Figure 8. Noise Figure
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
h
oe
, OUTPUT ADMITTANCE (
µmhos)
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
300
100
50
200
h
fe
, DC CURRENT GAIN
20
10
100
70
50
5
2
1
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
30
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Current Gain
20
10
Figure 10. Output Admittance
h
re
, VOLTAGE FEEDBACK RATIO (X 10
–4
)
10
7.0
5.0
h
ie
, INPUT IMPEDANCE (kΩ)
5.0
3.0
2.0
2.0
1.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.5
0.2
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT3906LT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
2.0
h
FE
, DC CURRENT GAIN (NORMALIZED)
T
J
= +125°C
1.0
0.7
0.5
V
CE
= 1.0 V
+25°C
–55°C
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
=1.0 mA
0.6
10 mA
30 mA
100 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
B
, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.2
1.0
T
J
= 25°C
1.0
V
BE(sat)
@ I
C
/I
B
=10
0.5
V
BE
@ V
CE
=1.0 V
V, VOLTAGE ( VOLTS )
0.8
COEFFICIENT (mV/ °C)
θ
VC
for V
CE(sat)
+25°C TO +125°C
0
–55°C TO +25°C
– 0.5
0.6
+25°C TO +125°C
–1.0
0.4
V
CE(sat)
@ I
C
/I
B
=10
0.2
–55°C TO +25°C
–1.5
θ
VB
for V
BE(sat)
0
1.0
2.0
5.0
10
20
50
100
200
–2.0
0
20
40
60
80
100
120
140
160
180
200
C , COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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