MIG10Q806HA datasheet, PDF - EEWORLD Datasheet

MIG10Q806HA: DescriptionTRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor; CategoryThe transistor; File Size328KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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MIG10Q806HA Overview

TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Reach Compliance Code	unknown
Is Samacsys	N
Shell connection	ISOLATED
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 code	R-XUFM-P24
Number of components	6
Number of terminals	24
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	600 ns
Nominal on time (ton)	150 ns
Base Number Matches	1

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