BCR35PNH6327 datasheet, PDF - EEWORLD Datasheet

BCR35PNH6327: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6; CategoryThe transistor; File Size524KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BCR35PNH6327 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN AND PNP
Guideline	AEC-Q101
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

	BCR35PNH6327	BCR35PNH6433
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT PACKAGE-6
Maker	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	compliant	compliant
Is Samacsys	N	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	70
JESD-30 code	R-PDSO-G6	R-PDSO-G6
Number of components	2	2
Number of terminals	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN AND PNP	NPN AND PNP
Guideline	AEC-Q101	AEC-Q101
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
Base Number Matches	1	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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