BCR135E6327 datasheet, PDF - EEWORLD Datasheet

BCR135E6327: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon; CategoryThe transistor; File Size108KB，4 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BCR135E6327 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

	BCR135E6327	BCR135E6433
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Maker	SIEMENS	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 21.3636	BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	70
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power consumption environment	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
VCEsat-Max	0.3 V	0.3 V

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