BC807-25WT/R13 datasheet, PDF - EEWORLD Datasheet

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BC807-25WT/R13: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryThe transistor; File Size104KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC807-25WT/R13 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC807-25WT/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BC807-16W SERIES

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE

FEATURES

• General purpose amplifier applications

• PNP epitaxial silicon, planar design

• Collector current I

= 500mA

• In compliance with EU RoHS 2002/95/EC directives

0.087(2.20)

0.070(1.80)

0.004(0.10)MIN.

0.044(1.10)

0.035(0.90)

0.087(2.20)

0.078(2.00)

45 Volts

POWER

300 mWatts

MECHANICAL DATA

• Case: SOT-323, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Apporx. Weight: 0.0001 ounce, 0.005 gram

• Device Marking : BC807-16W : 7S

BC807-25W : 7V

BC807-40W : 7W

0.054(1.35)

0.045(1.15)

0.056(1.40)

0.047(1.20)

0.006(0.15)

0.002(0.05)

0.004(0.10)MAX.

0.016(0.40)

0.008(0.20)

MECHANICAL DATA

PARAMETER

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Total Power Dissipation (Note 1)

Junction and Storage Temperature Range

SYMBOL

CEO

CBO

EBO

TOT

, T

STG

Value

-45

-50

-5.0

-500

300

-55 to 150

UNIT

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance Junction to Ambient (Note 1)

SYMBOL

θJA

Value

420

UNIT

C/W

Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions.

March 22,2011-REV.04

PAGE . 1

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