VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 25 A
FEATURES
2
(A)
• Designed and qualified
JEDEC
®
-JESD 47
according
to
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3L
TO-220AB
1 (K) (G) 3
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge.
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
16 A
800 V, 1200 V
1.25 V
45 mA
-40 °C to 125 °C
3L TO-220AB
Single SCR
DESCRIPTION
The VS-25TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter
T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
18
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
800, 1200
320
1.25
500
150
-40 to +125
UNITS
A
V
A
V
V/µs
A/µs
°C
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08-M3
VS-25TTS12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT 125 °C
mA
10
Revision: 21-Aug-17
Document Number: 96288
1
For technical questions within your region:
diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
VALUES
TYP.
16
25
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
-
200
500
150
V/μs
A/μs
270
320
365
515
5152
1.25
12.0
1.0
0.5
10
150
mA
A
2
s
A
2
s
V
m
V
A
MAX.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
TEST CONDITIONS
T
C
= 93 °C, 180° conduction half sine wave
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A,
T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 °C, V
DRM
= R
g
- k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 10 °C
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
µs
UNITS
Revision: 21-Aug-17
Document Number: 96288
2
For technical questions within your region:
diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style 3L TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +125
1.1
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
25TTS08
25TTS12
130
25
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
25TTS.. Series
R
thJC
(DC) = 1.1 °C/W
120
20
15
Ø
180°
120°
90°
60°
30°
RMS limit
110
Conduction angle
10
Ø
100
90°
30°
90
0
5
10
60°
Conduction angle
5
25TTS.. Series
T
J
= 125 °C
0
0
4
8
12
16
20
180°
120°
15
20
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
130
35
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
25TTS.. Series
R
thJC
(DC) = 1.1 °C/W
120
30
25
20
15
10
5
0
110
Ø
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
100
30°
60°
120°
90°
80
0
5
10
15
20
25
30
180°
DC
Ø
Conduction period
25TTS.. Series
T
J
= 125 °C
0
5
10
15
20
25
30
90
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Aug-17
Document Number: 96288
3
For technical questions within your region:
diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
300
280
At any rated load condition and
with
rated
V
RRM
applied following surge
350
Maximum non-repetitive surge current
versus
pulse train duration. Control
of conduction may not
be
maintained.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
240
220
200
180
160
140
120
1
10
VS-25TTS..
Series
Peak Half Sine Wave
On-State Current (A)
Peak Half Sine Wave
On-State Current (A)
260
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
300
250
200
150
VS-25TTS..
Series
100
100
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
1000
100
T
J
= 25 °C
T
J
= 125 °C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 10
V,
20
Ω
t
r
=
0.5
µs,
t
p
≥
6
µs
b)
Recommended load line for
≤
30 % rated dI/dt: 10
V,
65
Ω
t
r
=
1
µs,
t
p
≥
6
µs
T
J
= 125 °C
(1) P
GM
= 40
W,
t
p
= 1 ms
(2) P
GM
= 20
W,
t
p
= 2 ms
(3) P
GM
=
8 W,
t
p
= 5 ms
(4) P
GM
= 4
W,
t
p
= 10 ms
(a)
(b)
T
J
= 10 °C
T
J
= 25 °C
1
V
GD
I
GD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
25TTS.. Series
0.1
1
Frequency limited
by
P
G(AV)
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Revision: 21-Aug-17
Document Number: 96288
4
For technical questions within your region:
diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Transient
Thermal Impedance (°C/W)
Steady state
value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.1
25TTS.. Series
0.001
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
25
2
-
-
-
-
-
-
-
T
3
T
4
S
5
12
6
-M3
7
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration:
T = single thyristor
Package:
T = TO-220AB
Type of silicon:
S = standard recovery rectifier
Voltage rating
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-25TTS08-M3
VS-25TTS12-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96154
www.vishay.com/doc?95028
Revision: 21-Aug-17
Document Number: 96288
5
For technical questions within your region:
diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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