CSD17309Q3 datasheet, PDF - EEWORLD Datasheet

CSD17309Q3: Description30V, N-channel NexFET MOSFET?, single SON3x3, 6.3mΩ; CategoryDiscrete semiconductor The transistor; File Size443KB，13 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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30V, N-channel NexFET MOSFET?, single SON3x3, 6.3mΩ

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Texas Instruments
package instruction	SON-8
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	12 weeks
Samacsys Description	30V, N ch NexFET MOSFET™, single SON3x3, 6.3mOhm
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	162 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	60 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.0085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	56 pF
JESD-30 code	S-PDSO-N5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.8 W
Maximum pulsed drain current (IDM)	112 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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