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1N6643

Description
0.1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size71KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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1N6643 Overview

0.1 A, 50 V, SILICON, SIGNAL DIODE

• 1N6638,1N6642, 1N6643 AVAILABLE IN
JAN, JANTX, JANTXV,
AND
JANS
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
1N6638
1N6642
1N6643
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 3.0 mA/°C Above TL = + 75°C @L = 3/8”
Surge Current: I
FSM
= 2.5A, half sine wave, Pw = 8.3ms
0.056/0.075
1.42/1.91
POLARITY
BAND
(CATHODE)
0.140/0.180
3.55/4.57
1.00
25.4
0.018/0.022
0.46/0.56
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
V BR
@IR
=100µA
V RWM
V F1
I FM
= 10 mA
(Pulsed)
V dc
0.8
1.0
1.0
V dc
1.1
1.2
1.2
V F2 @ I F2
t fr
IF
= 50 mA
t rr
TYPES
(Pulsed)
mA
200
100
100
ns
20
20
20
ns
4.5
5.0
6.0
FIGURE 1
V(PK)
(min)
1N6638
1N6642
1N6643
150
100
75
V(PK)
125
75
50
DESIGN DATA
CASE:
Hermetically sealed, “D” Body
per MIL-PRF- 19500/578. D-5D
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJL): 160
°C/W maximum at L = .375
THERMAL IMPEDANCE: (Z
OJX): 25
°C/W maximum
POLARITY:
Cathode end is banded.
I R1
TYPES
VR
= 20 V
nA dc
I R2
@V R
= V RWM
µA dc
I R3
V R = 20 V
TA = 150°C
µA dc
I R4
V R = V RWM
TA = 150°C
µA dc
C T1
VR=
0V
pF
C T2
VR=
1.5V
pF
1N6638
1N6642
1N6643
35
25
50
0.5
0.5
0.5
50
50
75
100
100
160
2.5
5.0
5.0
2.0
2.8
2.8
MOUNTING POSITION:
Any
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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