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LBAV199LT1G

Description
Reverse recovery time (trr): 3ns DC reverse withstand voltage (Vr): 85V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA 85V, 125mA, trr=3ns, VF=1.25 V@150mA,PD=150mW
CategoryDiscrete semiconductor    diode   
File Size89KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LBAV199LT1G Overview

Reverse recovery time (trr): 3ns DC reverse withstand voltage (Vr): 85V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA 85V, 125mA, trr=3ns, VF=1.25 V@150mA,PD=150mW

LBAV199LT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.215 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time3 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
LESHAN RADIO COMPANY, LTD.
Surface Mount Low Leakge Diode
LBAS116LT1G
FEATURE
·
·
·
·
·
Ultra-Small Surface Mount Package
Very Low Leakage Current
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
We declare that the material of product compliance
with RoHS requirements.
3
LBAW156LT1G
LBAV170LT1G
LBAV199LT1G
.
MECHANICAL DATA
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Weight: 0.002 grams (approx.)
1
2
SOT–23
DEVICE MARKING ORDERING INFORMATION
Device
LBAS116LT1G
LBAS116LT3G
LBAW156LT1G
LBAW156LT3G
LBAV170LT1G
LBAV170LT3G
LBAV199LT1G
LBAV199LT3G
Marking
K50
K50
53
53
51
51
52
52
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
LBAV170LT1G
LBAV199LT1G
LBAS116LT1G
LBAW156LT1G
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Single Diode
Double Diode
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
85
60
215
125
500
4.0
1.0
0.5
150
833
-65 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Rev.O 1/3
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