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NCEP01T11

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 108A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 6.5mΩ @ 50A, 10V Maximum power Dissipation (Ta=25°C): 160W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size309KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCEP01T11 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 108A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 6.5mΩ @ 50A, 10V Maximum power Dissipation (Ta=25°C): 160W(Tc) Type: N-channel

NCEP01T11 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C108A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance6.5mΩ @ 50A,10V
Maximum power dissipation (Ta=25°C)160W(Tc)
typeN channel
Pb Free Product
http://www.ncepower.com
NCEP01T11
NCE N-Channel
Super Trench
Power MOSFET
Description
The NCEP01T11 uses
Super Trench
technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
and Q
g
. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
V
DS
=100V,I
D
=108A
R
DS(ON)
<6.5mΩ @ V
GS
=10V
Excellent gate charge x R
DS(on)
product(FOM)
Very low on-resistance
R
DS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Schematic diagram
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
NCEP01T11
Device
NCEP01T11
Device Package
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100
)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
100
±20
108
78
380
160
1.1
676
Unit
V
V
A
A
A
W
W/℃
mJ
I
DM
P
D
Wuxi NCE Power Semiconductor Co., Ltd
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