NCEP40T11G datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> NCEP40T11G

NCEP40T11G: DescriptionDrain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 110A (Tc) Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 2.8mΩ @ 55A, 10V Maximum power Dissipation (Ta=25°C): 75W (Tc) Type: N-channel N-channel, 40V, 110A, 2.4mΩ@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size380KB，6 Pages; ManufacturerWuxi NCE Power Semiconductor Co., Ltd; Websitehttp://www.ncepower.com/

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NCEP40T11G Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 110A (Tc) Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 2.8mΩ @ 55A, 10V Maximum power Dissipation (Ta=25°C): 75W (Tc) Type: N-channel N-channel, 40V, 110A, 2.4mΩ@10V

NCEP40T11G Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	40V
Continuous drain current (Id) at 25°C	110A(Tc)
Gate-source threshold voltage	2.2V @ 250uA
Drain-source on-resistance	2.8mΩ @ 55A,10V
Maximum power dissipation (Ta=25°C)	75W(Tc)
type	N channel

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