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NCE2302

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 59mΩ @ 2.5A, 2.5V Maximum power dissipation (Ta=25°C): 1W Type: N-channel N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size236KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCE2302 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 59mΩ @ 2.5A, 2.5V Maximum power dissipation (Ta=25°C): 1W Type: N-channel N-channel

NCE2302 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C4A
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance59mΩ @ 2.5A,2.5V
Maximum power dissipation (Ta=25°C)1W
typeN channel

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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