BT258S-800R,118 datasheet, PDF

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BT258S-800R,118: DescriptionOn-state current (It (RMS)) (Max): 8A On-state current (It (AV)) (Max): 5A Off-state voltage Vdrm: 800V Gate trigger voltage: 1.5V Type: Unidirectional thyristor gate Trigger current: 200uA; CategoryAnalog mixed-signal IC Trigger device; File Size260KB，12 Pages; ManufacturerWeEn Semiconductors; Environmental Compliance

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BT258S-800R,118 Overview

On-state current (It (RMS)) (Max): 8A On-state current (It (AV)) (Max): 5A Off-state voltage Vdrm: 800V Gate trigger voltage: 1.5V Type: Unidirectional thyristor gate Trigger current: 200uA

BT258S-800R,118 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	WeEn Semiconductors
package instruction	PLASTIC, SC-63, TO-252, DPAK-3/2
Reach Compliance Code	not_compliant
Factory Lead Time	6 weeks
Other features	SENSITIVE GATE
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum rms on-state current	8 A
Guideline	IEC-60134
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Trigger device type	SCR

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BT258S-800R

Logic level thyristor

22 August 2017

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable

plastic package intended for use in applications requiring high bidirectional blocking voltage

capability and high thermal cycling performance. These devices are intended to be interfaced

directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

2. Features and benefits

•

Direct interfacing with low power drivers and microcontrollers

High bidirectional blocking voltage capability

High thermal cycling performance

Planar passivated for voltage ruggedness and reliability

Sensitive gate suitable for logic level controls

Surface mountable package

3. Applications

•

General purpose switching and phase control

Protection circuits

Ignition circuits, CDI for 2- and 3-wheelers

Motor control - e.g. small kitchen appliances

4. Quick reference data

Table 1. Quick reference data

Symbol

DRM

RRM

TSM

Parameter

repetitive peak off-

state voltage

repetitive peak reverse

voltage

non-repetitive peak on- half sine wave; T

j(init)

= 25 °C;

= 10 ms;

Fig. 4; Fig. 5

state current

half sine wave; T

j(init)

= 25 °C;

= 8.3 ms

T(AV)

T(RMS)

junction temperature

average on-state

current

RMS on-state current

half sine wave; T

≤ 111 °C;

Fig. 1

half sine wave; T

≤ 111 °C;

Fig. 2;

Fig. 3

[1]

Conditions

Min

Typ

Max

800

125

Unit

°C

Static characteristics

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