MMBT8550
PNP Transistor
Features
For Switching and Amplifier Applications.
As Complementary Type of the NPN Transistor
MMBT8050 is Recommended.
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Absolute Maximum Ratings
Parameter
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
-V
CBO
-V
CEO
-V
EBO
-I
C
P
D
T
J
T
STG
40
25
6
600
350
150
-55 to 150
V
V
V
mA
mW
℃
℃
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA Current Gain Group
at -V
CE
= 1 V, - I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 35 V
Collector Base Breakdown Voltage
At -I
C
= 10 μA
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 μA
Collector Emitter Saturation Voltage
at I
C
= -500 mA, I
B
= -50 mA
Base Emitter Saturation Voltage
At -I
C
= 500 mA, -I
B
= 50 mA
Transition Frequency
at -V
CE
= 5 V, -I
C
= 10 mA
www.pingjingsemi.com
Revision：1.0 Oct-2017
C
D
H
FE
100
160
40
-
-
250
400
-
-I
CBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
F
T
-
40
25
6
-
-
-
-
-
-
-
-
-
100
100
-
-
-
0.5
1.2
-
nA
V
V
V
V
V
MHz
1/3
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
