SMD Type
N-Channel MOSFET
2KK5016
SOT-523
+0.
1
1.6
-0.1
MOSFET
U n it: m m
Features
V
DS
= 20 V
I
D
= 238 mA
R
dson
= 1.5 @Vgs=4.5V (Typ.)
Low Gate Charge for Fast Switching
ESD Protected Gate
2
+0.1
1.0
-0.1
+0.05
0.2
-0.05
0.15±0.05
1
1.
-0.15
6
+0.15
0.55 (REF.)
3
0.3±0.05
+0.1
0.5
-0.1
0.
36±0.1
1. Gate
0.
-0.05
75
+0.05
0.
-0.11
8
+0.
2. Source
3. Drain
Absolute Maximum Ratings (T
A
= 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Power Dissipation (Note 1)
)
Symbol
V
DS
V
GS
Steady State = 25
t
P
10μs
I
D
I
DM
P
D
R
JA
Rating
20
±10
238
714
300
416
150
-55 to 150
Unit
V
mA
W
/W
Steady State = 25
Thermal Resistance, Junction- to-Ambient (Note 1)
Junction Temperature
Storage Temperature Range
T
J
T
stg
Note 1: Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
0.
8±0.1
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1
SMD Type
N-Channel MOSFET
2KK5016
Electrical Characteristics (T
A
= 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Note 2: Pulse Test: pulse width
300 μs, duty cycle
MOSFET
, unless otherwise specified)
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
V
GS
=2.5V, I
D
=10mA
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
2%.
I
SD
=10mA,V
GS
=0V
V
GS
= 4.5 V, V
DS
= 5 V,
I
D
= 10mA, R
G
= 10
V
GS
=0V, V
DS
=5V, f=1MHz
V
DS
=3V,I
D
=10mA
2.0
80
11.5
10
3.5
13
15
ns
98
60
0.66
0.80
V
20
15
6.0
pF
3.5
mS
Test Conditions
I
D
=100 A, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
V
DS
=3V , I
D
=100 A
V
GS
=4.5V, I
D
=10mA
0.5
1.5
Min
20
1
±100
1.5
3.0
Typ
Max
Unit
V
A
μA
V
Note 3: Switching characteristics are independent of operating junction temperatures.
2
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