AP120N03K datasheet, PDF - EEWORLD Datasheet

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AP120N03K: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6mΩ @ 40A, 10V Maximum power dissipation (Ta=25°C): 60W(Tc) Type: N channel N channel 30V 120A; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，4 Pages; ManufacturerJiangsu All Power Microelectronics Co.,Ltd.; Websitehttp://www.all-power.net; 深圳铨力半导体有限公司成立于2016年，是一家致力于功率半导体电子元器件研发与销售的高新技术型企业。公司研发团队主要来自中国台湾、美国硅谷及內地顶尖技术精英，公司总部坐落于中国深圳，在韩国和广州设有分公司。铨力依靠专业的自主研发能力和先进的制造能力，为行业提供了超400KK/年的性能卓越的半导体产品，现有产品包括中低压MOSFET、AC-DC电源管理芯片等，铨力已经成为电脑、网通、消费性产品、手机、电池等行业长期合作伙伴，产品远销国内外。我们始终坚持主动了解客户需求，通过不断研发创新，竭诚为客户提供绿色、节能、高效的功率半导体产品和解决方案，为客户的成功提供强力支撑。

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AP120N03K Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6mΩ @ 40A, 10V Maximum power dissipation (Ta=25°C): 60W(Tc) Type: N channel N channel 30V 120A

AP120N03K Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	120A(Tc)
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	6mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)	60W(Tc)
type	N channel

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