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1N6270

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size28KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet View All

1N6270 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6267 - 1N6303A
V
BR
: 6.8 - 200 Volts
P
PK
: 1500 Watts
FEATURES :
* 1500W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Typical I
R
less then 1
µ
A above 10V
TRANSIENT VOLTAGE
SUPPRESSOR
DO-201AD
0.21 (5.33)
0.19 (4.83)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
MECHANICAL DATA
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 1.21 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at Ta = 25
°
C, Tp=1ms
(Note1)
Steady State Power Dissipation at T
L
= 75
°
C
Lead Lengths 0.375", (9.5mm)
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Symbol
P
PK
Value
1500
Unit
Watts
P
D
5.0
Watts
I
FSM
T
J,
T
STG
200
- 65 to + 175
Amps.
°
C
Operating and Storage Temperature Range
Note :
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°
C per Fig. 1
2
2
(2) Mounted on Copper Lead area of 1.57 in (40mm ).
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.
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