STTH112A datasheet, PDF - EEWORLD Datasheet

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STTH112A: DescriptionReverse recovery time (trr): 500ns DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.9V @ 1A 1200V, VF=1.65V@1A, Trr =75nS; CategoryDiscrete semiconductor diode; File Size72KB，8 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STTH112A Overview

Reverse recovery time (trr): 500ns DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.9V @ 1A 1200V, VF=1.65V@1A, Trr =75nS

STTH112A Parametric

Parameter Name	Attribute value
Brand Name	STMicroelectronics
Maker	STMicroelectronics
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	11 weeks
Samacsys Description	STTH112A, Fast Rectifier Diode, Switching 1A max, 1200V 75ns, 2-Pin, SMA
Other features	HIGH RELIABILITY, FRE WHEELING DIODE, SNUBBER DIODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.65 V
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	18 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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STTH112

High voltage ultrafast rectifier

Features

■

Low forwarded voltage drop

High reliability

High surge current capability

Soft switching for reduced EMI disturbances

Planar technology

DO-41

STTH112

Description

The STTH112, which is using ST ultrafast high

voltage planar technology, is specially suited for

free-wheeling, clamping, snubbering,

demagnetization in power supplies and other

power switching applications

SMA

STTH112A

SMB

STTH112U

Table 1.

Device summary

Symbol

F(AV)

RRM

j (max)

F (max)

Value

1200 V

175 °C

1.65 V

October 2009

Doc ID 9343 Rev 5

1/8

www.st.com

STTH112A Related Products

	STTH112A	STTH112U
Description	Reverse recovery time (trr): 500ns DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.9V @ 1A 1200V, VF=1.65V@1A, Trr =75nS	Reverse recovery time (trr): 75ns DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.9V @ 1A
Brand Name	STMicroelectronics	STMicroelectronics
Maker	STMicroelectronics	STMicroelectronics
package instruction	R-PDSO-C2	R-PDSO-C2
Contacts	2	2
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Factory Lead Time	11 weeks	42 weeks 1 day
Samacsys Description	STTH112A, Fast Rectifier Diode, Switching 1A max, 1200V 75ns, 2-Pin, SMA	STTH112U, Fast Rectifier Diode, Switching 1A max, 1200V 75ns, 2-Pin, SMB
Other features	HIGH RELIABILITY, FRE WHEELING DIODE, SNUBBER DIODE	HIGH RELIABILITY, FRE WHEELING DIODE, SNUBBER DIODE
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.65 V	1.65 V
JESD-30 code	R-PDSO-C2	R-PDSO-C2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Maximum non-repetitive peak forward current	18 A	18 A
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	175 °C	175 °C
Maximum output current	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1200 V	1200 V
Maximum reverse recovery time	0.075 µs	0.075 µs
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn) - annealed
Terminal form	C BEND	C BEND
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	30

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