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SB1100

Description
DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 1A Forward voltage drop (Vf): 850mV @ 1A
CategoryDiscrete semiconductor    diode   
File Size160KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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SB1100 Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 1A Forward voltage drop (Vf): 850mV @ 1A

SB1100 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionD4, 2 PIN
Manufacturer packaging code017AH
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time13 weeks
Other featuresFREE WHEELING DIODE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.79 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current40 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation1.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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