Rated power: 1.5W Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 300V Transistor type: NPN
| Parameter Name | Attribute value |
| Brand Name | ON Semiconductor |
| Is it lead-free? | Lead free |
| Maker | ON Semiconductor |
| Parts packaging code | TO-261AA |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Contacts | 4 |
| Manufacturer packaging code | 0.0318 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 8 weeks |
| Samacsys Description | NPN High Voltage Bipolar Transistor, 0.05 A 300 V SOT-223 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 300 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-261AA |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 1.5 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 50 MHz |
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