MUN5114T1G datasheet, PDF - EEWORLD Datasheet

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MUN5114T1G: DescriptionRated power: 202mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP - pre-biased PNP band-stop transistor, 50V, 100mA, R=10K/47K; CategoryDiscrete semiconductor The transistor; File Size170KB，12 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MUN5114T1G Overview

Rated power: 202mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP - pre-biased PNP band-stop transistor, 50V, 100mA, R=10K/47K

MUN5114T1G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	419-04
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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MUN2115, MMUN2115L,

MUN5115, DTA114TE,

DTA114TM3, NSBA114TF3

Digital Transistors (BRT)

R1 = 10 kW, R2 =

PNP Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Features

PIN 1

BASE

(INPUT)

www.onsemi.com

PIN CONNECTIONS

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

•

MARKING DIAGRAMS

SC−59

CASE 318D

STYLE 1

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

= 25°C)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current

−

Continuous

Input Forward Voltage

Input Reverse Voltage

Symbol

CBO

CEO

IN(fwd)

IN(rev)

Max

100

Unit

Vdc

mAdc

Vdc

XX MG

XXX MG

XX MG

XX M

XM 1

XXX

SOT−23

CASE 318

STYLE 6

SC−70/SOT−323

CASE 419

STYLE 3

SC−75

CASE 463

STYLE 1

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2012

October, 2016

−

Rev. 3

Publication Order Number:

DTA114T/D

MUN5114T1G Related Products

	MUN5114T1G	NSVDTA115EET1G	NSVMMUN2114LT3G	MMUN2114LT1G	MUN2114T1G
Description	Rated power: 202mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP - pre-biased PNP band-stop transistor, 50V, 100mA, R=10K/47K	TRANS PREBIAS PNP 0.2W SC75-3	TRANS PNP BIPO 50V SOT23-3	Rated power: 246mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP - pre-biased PNP band-stop transistor, 50V, 100mA, R=10K/47K	Rated power: 230mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP - Pre-biased PNP,-50V,-100mA
Brand Name	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SOT-23, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Manufacturer packaging code	419-04	463-01	318-08	318-08	318D-04
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Factory Lead Time	1 week	8 weeks	4 weeks	1 week	1 week
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO 0.21	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	80	80	80
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.15 W	0.3 W	0.4 W	0.4 W	0.338 W
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	-
Parts packaging code	SC-70	-	-	SOT-23	SC-59
Contacts	3	-	-	3	3
ECCN code	EAR99	-	-	EAR99	EAR99
Peak Reflow Temperature (Celsius)	260	-	-	260	260
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified
Maximum time at peak reflow temperature	40	-	-	40	40
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-

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