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MMBZ5231BLT1G

Description
Accuracy: ±5% Voltage regulation value (typical value): 5.1V Reverse leakage current: 5uA @ 2V Maximum power: 225mW 5.1V 0.225W
CategoryDiscrete semiconductor    diode   
File Size118KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MMBZ5231BLT1G Overview

Accuracy: ±5% Voltage regulation value (typical value): 5.1V Reverse leakage current: 5uA @ 2V Maximum power: 225mW 5.1V 0.225W

MMBZ5231BLT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionTO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance17 Ω
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.225 W
Certification statusNot Qualified
Nominal reference voltage5.1 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance5.1%
Working test current20 mA
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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