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PSMN5R0-80PS,127

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 100A (Tc) Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 4.7mΩ @ 15A, 10V Maximum power consumption Dispersion (Ta=25°C): 270W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size714KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PSMN5R0-80PS,127 Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 100A (Tc) Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 4.7mΩ @ 15A, 10V Maximum power consumption Dispersion (Ta=25°C): 270W(Tc) Type: N-channel

PSMN5R0-80PS,127 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C100A(Tc)
Gate-source threshold voltage4V @ 1mA
Drain-source on-resistance4.7mΩ @ 15A,10V
Maximum power dissipation (Ta=25°C)270W(Tc)
typeN channel

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