IRF720PBF datasheet, PDF - EEWORLD Datasheet

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IRF720PBF: DescriptionDrain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 3.3A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.8Ω @ 2A, 10V Maximum power Dissipation (Ta=25°C): 50W(Tc) Type: N-channel N-channel 400V 2.1A; CategoryDiscrete semiconductor MOS (field effect tube); File Size291KB，8 Pages; ManufacturerInternational Rectifier(Infineon); Websitehttp://www.irf.com

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IRF720PBF Overview

Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 3.3A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.8Ω @ 2A, 10V Maximum power Dissipation (Ta=25°C): 50W(Tc) Type: N-channel N-channel 400V 2.1A

IRF720PBF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	400V
Continuous drain current (Id) at 25°C	3.3A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	1.8Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)	50W(Tc)
type	N channel

IRF720PBF Related Products

	IRF720PBF
Description	Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 3.3A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.8Ω @ 2A, 10V Maximum power Dissipation (Ta=25°C): 50W(Tc) Type: N-channel N-channel 400V 2.1A
Drain-source voltage (Vdss)	400V
Continuous drain current (Id) at 25°C	3.3A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	1.8Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)	50W(Tc)
type	N channel

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