IRFD9120PbF datasheet, PDF - EEWORLD Datasheet

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IRFD9120PbF: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 1A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 600mA, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: P channel P channel, -100V, -1A, 600mΩ@-10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，9 Pages; ManufacturerInternational Rectifier(Infineon); Websitehttp://www.irf.com

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IRFD9120PbF Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 1A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 600mA, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: P channel P channel, -100V, -1A, 600mΩ@-10V

IRFD9120PbF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	1A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	600mΩ @ 600mA,10V
Maximum power dissipation (Ta=25°C)	1.3W
type	P channel

IRFD9120PbF Related Products

	IRFD9120PbF
Description	Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 1A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 600mA, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: P channel P channel, -100V, -1A, 600mΩ@-10V
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	1A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	600mΩ @ 600mA,10V
Maximum power dissipation (Ta=25°C)	1.3W
type	P channel

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