IRFPE50PBF datasheet, PDF - EEWORLD Datasheet

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IRFPE50PBF: DescriptionDrain-source voltage (Vdss): 800V Continuous drain current (Id) (at 25°C): 7.8A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.2Ω @ 4.7A, 10V Maximum power dissipation (Ta=25°C): 190W Type: N-channel N-channel, 800V, 7.8A, 1.2Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，9 Pages; ManufacturerInternational Rectifier(Infineon); Websitehttp://www.irf.com

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IRFPE50PBF Overview

Drain-source voltage (Vdss): 800V Continuous drain current (Id) (at 25°C): 7.8A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.2Ω @ 4.7A, 10V Maximum power dissipation (Ta=25°C): 190W Type: N-channel N-channel, 800V, 7.8A, 1.2Ω@10V

IRFPE50PBF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	800V
Continuous drain current (Id) at 25°C	7.8A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	1.2Ω @ 4.7A,10V
Maximum power dissipation (Ta=25°C)	190W
type	N channel

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