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BFP640H6327

Description
Transistor type: NPN Collector current Ic: 50mA Collector-emitter breakdown voltage Vce: 4.5V Rated power: 200mW
CategoryDiscrete semiconductor    triode   
File Size430KB,21 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BFP640H6327 Overview

Transistor type: NPN Collector current Ic: 50mA Collector-emitter breakdown voltage Vce: 4.5V Rated power: 200mW

BFP640H6327 Parametric

Parameter NameAttribute value
Transistor typeNPN
Collector current Ic50mA
Collector-emitter breakdown voltage Vce4.5V
rated power200mW

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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