Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 21mA Gate-source threshold voltage: 2.6V @ 8uA Drain-source on-resistance: 500Ω @ 16mA, 10V Maximum power dissipation (Ta =25°C): 500mW Type: N-channel N-channel, 600V, 21mA, 500Ω@10V
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 10 weeks |
| Samacsys Description | N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (ID) | 0.021 A |
| Maximum drain-source on-resistance | 600 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 1.5 pF |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| BSS127H6327XTSA2 | BSS127H6327 | |
|---|---|---|
| Description | Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 21mA Gate-source threshold voltage: 2.6V @ 8uA Drain-source on-resistance: 500Ω @ 16mA, 10V Maximum power dissipation (Ta =25°C): 500mW Type: N-channel N-channel, 600V, 21mA, 500Ω@10V | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 |
| Is it Rohs certified? | conform to | conform to |
| Maker | Infineon | Infineon |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Samacsys Description | N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2 | Infineon,Trans BSS127H6327 Infineon BSS127H6327 N-channel MOSFET Transistor, 0.021 A, 600 V, 3-Pin SOT-23 |
| Other features | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V | 600 V |
| Maximum drain current (ID) | 0.021 A | 0.021 A |
| Maximum drain-source on-resistance | 600 Ω | 600 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 1.5 pF | 1.5 pF |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e3 | e3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
