DMN30H14DLY-13 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> DMN30H14DLY-13

DMN30H14DLY-13: DescriptionDrain-source voltage (Vdss): 300V Continuous drain current (Id) (at 25°C): 210mA Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 14Ω @ 300mA, 10V Maximum power dissipation (Ta= 25°C): 900mW Type: N-channel N-channel, 300V, 210mA, 14Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size329KB，6 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMN30H14DLY-13 Overview

Drain-source voltage (Vdss): 300V Continuous drain current (Id) (at 25°C): 210mA Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 14Ω @ 300mA, 10V Maximum power dissipation (Ta= 25°C): 900mW Type: N-channel N-channel, 300V, 210mA, 14Ω@10V

DMN30H14DLY-13 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	300V
Continuous drain current (Id) at 25°C	210mA
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	14Ω @ 300mA,10V
Maximum power dissipation (Ta=25°C)	900mW
type	N channel

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