DMP22D6UT
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
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SOT-523
NEW PRODUCT
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Drain
D
Gate
ESD PROTECTED
Gate
Protection
Diode
G
Source
S
TOP VIEW
Equivalent Circuit
TOP VIEW
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 85°C
I
D
I
DM
Value
-20
±8
-430
-310
-750
Units
V
V
mA
mA
Characteristic
Steady
State
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
-20
⎯
⎯
-0.5
⎯
200
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
0.7
1.1
1.7
⎯
⎯
⎯
⎯
⎯
Max
⎯
-1.0
±1.0
-1.0
1.1
1.6
2.6
⎯
-1.4
175
30
20
Unit
V
μA
μA
V
Ω
ms
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250mA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±4.5V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= -115mA
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width
≤10μS,
Duty Cycle
≤1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP22D6UT
-I
D
, DRAIN CURRENT (A)
NEW PRODUCT
0
0
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
2 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP22D6UT
NEW PRODUCT
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
-V
DS
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
150
120
90
60
30
0
-I
D
, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
Ordering Information
Part Number
DMP22D6UT-7
Notes:
(Note 6)
Case
SOT-523
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PBA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
PBA
YM
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
3 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP22D6UT
Package Outline Dimensions
A
B C
NEW PRODUCT
G
H
K
M
N
J
D
L
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
⎯
⎯
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
4 of 4
www.diodes.com
November 2008
© Diodes Incorporated
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