SPICE MODEL: MMST5401
MMST5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMST5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 2)
B
E
G
H
B C
A
C
SOT-323
Dim
A
B
C
D
E
G
M
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
0.65 Nominal
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): K4M
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
B
K
H
J
K
L
M
a
J
D
E
L
C
All Dimensions in mm
E
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
Value
-160
-150
-5.0
-200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30170 Rev. 6 - 2
1 of 3
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MMST5401
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-160
-150
-5.0
¾
¾
50
60
50
¾
¾
¾
40
100
¾
Max
¾
¾
¾
-50
-50
¾
240
¾
-0.2
-0.5
-1.0
Unit
V
V
V
nA
mA
nA
Test Condition
I
C
= -100mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10mA, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100°C
V
EB
= -3.0V, I
C
= 0
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -200mA,
R
S
= 10W, f = 1.0kHz
h
FE
V
CE(SAT)
V
BE(SAT)
¾
V
V
C
obo
h
fe
f
T
NF
6.0
200
300
8.0
pF
¾
MHz
dB
Ordering Information
(Note 4)
Device
MMST5401-7
Notes:
Packaging
SOT-323
Shipping
3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST5401-7-F.
Marking Information
K4M
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30170 Rev. 6 - 2
2 of 3
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MMST5401
200
10.0
I
C
= 10
I
B
150
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
P
D
, POWER DISSIPATION (mW)
1.0
T
A
= 150°C
100
0.1
T
A
= -50°C
T
A
= 25°C
50
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
0.01
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
10,000
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
V
CE
= 5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
CE
= 5V
T
A
= -50°C
h
FE
, DC CURRENT GAIN
1000
T
A
= 150°C
T
A
= 25°C
100
T
A
= 25°C
10
T
A
= -50°C
T
A
= 150°C
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
1000
f
t
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 10V
100
10
1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs Collector Current
DS30170 Rev. 6 - 2
3 of 3
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MMST5401
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