DMN4026SSD-13 datasheet, PDF - EEWORLD Datasheet

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DMN4026SSD-13: DescriptionDrain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 24mΩ @ 6A, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: Dual N-channel N-channel, 40V, 9A, 24mΩ@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size303KB，6 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMN4026SSD-13 Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 24mΩ @ 6A, 10V Maximum power dissipation (Ta= 25°C): 1.3W Type: Dual N-channel N-channel, 40V, 9A, 24mΩ@10V

DMN4026SSD-13 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	40V
Continuous drain current (Id) at 25°C	7A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	24mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)	1.3W
type	Dual N-channel

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