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DMN2011UFX-7

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 12.2A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 9.5mΩ @ 10A, 4.5V Maximum power dissipation (Ta=25°C): 2.1W Type: Dual N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size616KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DMN2011UFX-7 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 12.2A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 9.5mΩ @ 10A, 4.5V Maximum power dissipation (Ta=25°C): 2.1W Type: Dual N-channel

DMN2011UFX-7 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C12.2A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance9.5mΩ @ 10A,4.5V
Maximum power dissipation (Ta=25°C)2.1W
typeDual N-channel
DMN2011UFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(ON)
max
9.5mΩ @ V
GS
= 4.5V
13mΩ @ V
GS
= 2.5V
I
D
max
T
A
= +25°C
12.2 A
10.4 A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Mechanical Data
Case: V-DFN2050-4
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.01 grams (Approximate)
G1 S1
V-DFN2050-4
D
D
D1/D2
ESD PROTECTED
G1
G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Top View
Bottom View
G2 S2
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2011UFX-7
Notes:
Case
V-DFN2050-4
Packaging
3,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1X
YM
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
1X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
August 2015
© Diodes Incorporated
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
1 of 7
www.diodes.com
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