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AT45DB021E-SSHN-T

Description
Memory architecture (format): FLASH Memory interface type: SPI Memory capacity: 2Mb (264 Bytes x 1024 pages) Memory type: Non-Volatile 2-Mbit (256K x 8bit), SPI interface, operating voltage: 1.65V to 3.6V
Categorystorage    storage   
File Size2MB,68 Pages
ManufacturerAdesto Technologies
Environmental Compliance
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AT45DB021E-SSHN-T Overview

Memory architecture (format): FLASH Memory interface type: SPI Memory capacity: 2Mb (264 Bytes x 1024 pages) Memory type: Non-Volatile 2-Mbit (256K x 8bit), SPI interface, operating voltage: 1.65V to 3.6V

AT45DB021E-SSHN-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAdesto Technologies
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Reach Compliance Codecompliant
Factory Lead Time13 weeks
Maximum clock frequency (fCLK)70 MHz
Data retention time - minimum20
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.925 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width1
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply1.8/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeSPI
Maximum standby current0.000008 A
Maximum slew rate0.016 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width3.9 mm
write protectHARDWARE/SOFTWARE

AT45DB021E-SSHN-T Related Products

AT45DB021E-SSHN-T AT45DB021E-SHN-T
Description Memory architecture (format): FLASH Memory interface type: SPI Memory capacity: 2Mb (264 Bytes x 1024 pages) Memory type: Non-Volatile 2-Mbit (256K x 8bit), SPI interface, operating voltage: 1.65V to 3.6V Memory architecture (format): FLASH Memory interface type: SPI Memory capacity: 2Mb (264 Bytes x 1024 pages) Memory type: Non-Volatile 2-Mbit (256K x 8bit), SPI interface, operating voltage: 1.65V to 3.6V
Is it Rohs certified? conform to conform to
Maker Adesto Technologies Adesto Technologies
Parts packaging code SOIC SOIC
package instruction SOP, SOP8,.25 SOP,
Contacts 8 8
Reach Compliance Code compliant compliant
Factory Lead Time 13 weeks 13 weeks
Maximum clock frequency (fCLK) 70 MHz 70 MHz
JESD-30 code R-PDSO-G8 R-PDSO-G8
JESD-609 code e4 e4
length 4.925 mm 5.29 mm
memory density 2097152 bit 2097152 bit
Memory IC Type FLASH FLASH
memory width 1 1
Humidity sensitivity level 1 1
Number of functions 1 1
Number of terminals 8 8
word count 2097152 words 2097152 words
character code 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 2MX1 2MX1
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Celsius) 260 260
Programming voltage 2.7 V 2.7 V
Maximum seat height 1.75 mm 2.16 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 1.65 V 1.65 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
type NOR TYPE NOR TYPE
width 3.9 mm 5.24 mm
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