VBMB1101M datasheet, PDF - EEWORLD Datasheet

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VBMB1101M: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 18A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 86mΩ @ 100A, 10V Maximum power dissipation (Ta= 25°C): 48W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，8 Pages; ManufacturerVBsemi Electronics Co. Ltd.; Websitehttp://www.vbsemi.tw/; Founded in 2000, VBsemi is the most competitive power semiconductor component manufacturer of MOSFET in Taiwan. The company has obtained many product invention patents and has been certified by ISO14001, QS9000, and ISO9001. VBsemi is a Taiwanese company that independently develops, produces, and sells MOSFET under its own brand. From component design, wafer processing, packaging, characteristic analysis, testing, and customer service, it is marketed worldwide. The company's products have been widely used in UPS, Power Inverter, CCFL, DC Fan, SMPS, Adapter, Lighting, Battery, DC-DC, LCD Monitor and other fields.

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VBMB1101M Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 18A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 86mΩ @ 100A, 10V Maximum power dissipation (Ta= 25°C): 48W Type: N-channel

VBMB1101M Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	18A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	86mΩ @ 100A,10V
Maximum power dissipation (Ta=25°C)	48W
type	N channel

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VBMB1101M

www.VBsemi.com

N-Channel 100-V (D-S) MOSFET

FEATURES

100

= 10 V

Single

0.086

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

• Isolated Package

• High Voltage Isolation = 2.5 kV

RMS

(t = 60 s;

f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• 175

°C Operating Temperature

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead (Pb)-free Available

RoHS

COMPLIANT

TO-220 FULLPAK

G D S

N-Channel

MOSFET

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

100

± 20

0.32

720

4.8

5.5

- 55 to + 175

300

1.1

UNIT

W/°C

V/ns

°C

lbf · in

N·m

= 25 °C

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 3.7 mH, R

= 25

Ω,

= 17 A (see fig. 12).

c. I

≤

17 A, dI/dt

≤

200 A/µs, V

≤

, T

≤

175 °C.

d. 1.6 mm from case.

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