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UMW5N65F

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2Ω @ 2.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,9 Pages
ManufacturerUMW(Guangdong Youtai Semiconductor Co., Ltd.)
Websitehttp://www.umw-ic.com/

UMW is a leading provider of LDOs, MOSFETs, DC/DC, RS-232, RS-485, ESD/TVS, optocouplers, logic circuits, temperature sensor from mainland China. UTD's solutions enable low-risk development, lower overall system cost, and faster time-to-market for a variety of global applications.

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UMW5N65F Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2Ω @ 2.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: N-channel

UMW5N65F Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C5A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2Ω @ 2.5A,10V
Maximum power dissipation (Ta=25°C)50W(Tc)
typeN channel
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