MB8S datasheet, PDF - EEWORLD Datasheet

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MB8S: DescriptionReverse peak voltage: 800V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1V @ 500mA; CategoryDiscrete semiconductor Rectifier bridge; File Size251KB，3 Pages; ManufacturerSHIKUES; Websitehttp://www.shike.tw; Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.

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MB8S Overview

Reverse peak voltage: 800V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1V @ 500mA

MB8S Parametric

Parameter Name	Attribute value
Reverse peak voltage	800V
Average rectified current (Io)	500mA
Forward voltage drop (Vf)	1V @ 500mA

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0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

FEATURES:

• Glass Passivated Chip Junction

• Reverse Voltage - 100 to 1000 V

• Forward Current - 0.8 A

• High Surge Current Capability

• Designed for Surface Mount Application

MECHANICAL DATA

• Case: MBS

• Terminals: Solderable per MIL-STD-750, Method 2026

750,

• Approx. Weight: 100mg /0.0035oz

Maximum Ratings and Electrical characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.Single phase half wave 60 Hz, resistive or inductive load, for capacitive load

half-wave

current derate by 20 %.

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum DC Blocking Voltage

Average Rectified Output Current

at Ta = 50 °C

Peak Forward Surge Current 8.3 ms Single

Half Sine Wave Superimposed on Rated Load

(JEDEC Method)

at 0.4 A

Maximum Forward Voltage

at 0.8 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

=25 °C

Symbols

RRM

RMS

MB1S

MB2S

MB4S

MB6S

MB8S

MB10S

Units

100

200

140

200

400

280

400

0.8

600

420

600

800

560

800

1000

700

1000

FSM

1.0

1.1

=125 °C

μA

℃

Typical Junction Capacitance（Note1）

Typical Thermal Resistance（Note2）

θJA

θJL

-55 ~ +150

Operating and Storage Temperature Range

, T

stg

Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.

2. Mounted on glass epoxy PC board with 4

4×(5×5mm

）

copper pad.

1 of 3

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