DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Micron Technology |
Parts packaging code | TSOP |
package instruction | TSSOP, TSSOP66,.46 |
Contacts | 66 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Is Samacsys | N |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.75 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
interleaved burst length | 2,4,8 |
JESD-30 code | R-PDSO-G66 |
JESD-609 code | e3 |
length | 22.22 mm |
memory density | 134217728 bit |
Memory IC Type | DDR DRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 66 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 16MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSSOP |
Encapsulate equivalent code | TSSOP66,.46 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 2,4,8 |
Maximum standby current | 0.003 A |
Maximum slew rate | 0.33 mA |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal pitch | 0.65 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
width | 10.16 mm |
Base Number Matches | 1 |