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M29F200BT70M6F

Description
128KX16 FLASH 5V PROM, 70ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44
Categorystorage    storage   
File Size302KB,39 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M29F200BT70M6F Overview

128KX16 FLASH 5V PROM, 70ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44

M29F200BT70M6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.525 INCH, LEAD FREE, PLASTIC, SOP-44
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum access time70 ns
Other featuresTOP BOOT BLOCK
Spare memory width8
startup blockTOP
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G44
length28.5 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,3
Number of terminals44
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height3 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width12.6 mm
Base Number Matches1
M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
Features
Single 5V±10% supply voltage for Program,
Erase and Read operations
Access time: 45, 50, 70, 90ns
Programming time
– 8µs per Byte/Word typical
7 memory blocks
– 1 Boot Block (Top or Bottom location)
– 2 parameter and 4 main blocks
Program/Erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register polling and toggle bits
– Ready/Busy output pin
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary Block Unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
20 years data retention
– Defectivity below 1 ppm/year
Electronic Signature
– Manufacturer code: 0020h
– Top Device code M29F200BT: 00D3h
– Bottom Device code: M29F200BB: 00D4h
ECOPACK
®
packages available
TSOP48 (N)
12 x 20mm
44
1
SO44 (M)
March 2007
Rev 5
1/39
www.st.com
1

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