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MT18KDF51272PDZ-1G6XX

Description
DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, MO-269, RDIMM-240
Categorystorage   
File Size409KB,21 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT18KDF51272PDZ-1G6XX Overview

DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, MO-269, RDIMM-240

MT18KDF51272PDZ-1G6XX Parametric

Parameter NameAttribute value
MakerMicron Technology
Parts packaging codeDIMM
package instructionDIMM,
Contacts240
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N240
memory density38654705664 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count536870912 words
character code512000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.45 V
Minimum supply voltage (Vsup)1.283 V
Nominal supply voltage (Vsup)1.35 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L VLP RDIMM
Features
1.35V DDR3L SDRAM VLP RDIMM
MT18KDF51272PDZ – 4GB
MT18KDF1G72PDZ – 8GB
Features
• DDR3L functionality and operations supported as
defined in the component data sheet
• 240-pin, registered dual in-line, very-low-profile
memory module (VLP RDIMM)
• Fast data transfer rates: PC3-12800, PC3-10600,
PC3-8500, or PC3-6400
• 4GB (512 Meg x 72), 8GB (1 Gig x 72)
• V
DD
= 1.35V (1.283–1.45V)
• V
DD
= 1.5V (1.425–1.575V)
• Backward-compatible to V
DD
= 1.5V ±0.075V
• V
DDSPD
= 3.0–3.6V
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Dual-rank
• On-board I
2
C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Table 1: Key Timing Parameters
Speed
Grade
-1G6
-1G4
-1G1
-1G0
-80B
Industry
Nomenclature
PC3-12800
PC3-10600
PC3-8500
PC3-8500
PC3-6400
Data Rate (MT/s)
CL = 11 CL = 10
1600
1333
1333
CL = 9
1333
1333
CL = 8
1066
1066
1066
1066
CL = 7
1066
1066
1066
CL = 6
800
800
800
800
800
CL = 5
667
667
667
667
667
t
RCD
t
RP
t
RC
Figure 1: 240-Pin RDIMM (MO-269 R/C L)
Module height: 18.75mm (0.738in)
Options
• Operating
– Commercial (0°C
T
A
+70°C)
– Industrial (–40°C
T
A
+85°C)
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
Note:
temperature
1
Marking
None
T
Z
-1G6
-1G4
-1G1
1. Contact Micron for industrial temperature
module offerings.
(ns)
13.125
13.125
13.125
15
15
(ns)
13.125
13.125
13.125
15
15
(ns)
48.125
49.125
50.625
52.5
52.5
PDF: 09005aef847d79ed
kdf18c512_1Gx72pdz - Rev. G 4/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.

MT18KDF51272PDZ-1G6XX Related Products

MT18KDF51272PDZ-1G6XX MT18KDF51272PDZ-1G4XX MT18KDF51272PDZ-1G1XX
Description DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, MO-269, RDIMM-240 DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, MO-269, RDIMM-240 DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, MO-269, RDIMM-240
Maker Micron Technology Micron Technology Micron Technology
Parts packaging code DIMM DIMM DIMM
package instruction DIMM, HALOGEN FREE, MO-269, RDIMM-240 HALOGEN FREE, MO-269, RDIMM-240
Contacts 240 240 240
Reach Compliance Code compliant unknown unknown
ECCN code EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N240 R-XDMA-N240 R-XDMA-N240
memory density 38654705664 bit 38654705664 bit 38654705664 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72 72
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 240 240 240
word count 536870912 words 536870912 words 536870912 words
character code 512000000 512000000 512000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 512MX72 512MX72 512MX72
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified Not Qualified
self refresh YES YES YES
Maximum supply voltage (Vsup) 1.45 V 1.45 V 1.45 V
Minimum supply voltage (Vsup) 1.283 V 1.283 V 1.283 V
Nominal supply voltage (Vsup) 1.35 V 1.35 V 1.35 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL
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